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A GaN p-n junction structure was grown on a (0001) sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition using a double buffer layer. The resulting light emitting diode (LED) was further exposed to a low-energy electron beam source. The effect of e-beam exposure on the room-temperature electroluminescence spectra of the LED is reported. It is found that the electroluminescence spectral features change dramatically as a function of the electron-beam exposure time and current density. This is attributed to changes in active Mg concentration. The origin of each electroluminescence band is discussed.
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Li et al. (1996) studied this question.
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