The initial oxidation of GaAs(110) is studied with high-resolution photoemission. The Ga and As $3d$ core levels of atoms within two to three atomic layers from the surface show small oxygen-induced shifts at about half-monolayer oxygen coverage [corresponding to about 10⁷ L (1 L = 10^-6 Torr sec) oxygen exposure]. The surface As atoms with a large chemical shift of 3.0 eV are significantly produced only at much higher oxygen exposures.
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Miller et al. (1984) studied this question.
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