Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions

Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films.