More than 100 years ago, Braun' reported that the point contacts between a thin metal wire and a crystal showed a resistance dependent on the polarity of the applied voltage. The first metal-semiconductor (MS) rectifying contact had been detected. Since then, the MS interface has played an important role in many technological developments. However, a full understanding of the physics behind the barrier height has so far been elusive. and it remains a very active research field today.
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Lindau et al. (1986) studied this question.
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