Preparation and Properties of InxGa1-xAs Microcrystallites Embedded in SiO₂ Glass Films

In x Ga 1- x As microcrystallites were successfully doped into SiO 2 glass films by the rf-magnetron sputtering technique. These microcrystallites exhibited a variety of narrow band-gap structures which were affected not only by the quantum size effect but by the composition of these microcrystallites. The composition of the microcrystallite in these films depended on the sputtering target composition, and the average diameter of In x Ga 1- x As microcrystallites estimated from X-ray diffraction spectra was controlled by the substrate temperature. The optical absorption spectra of these films clearly exhibited the shift of the absorption edge caused by the quantum size effect.