A novel design for an antireflection (AR) coating layer on facets of laser diodes (LDs) is proposed and the validity of the design is confirmed experimentally. The proposed novel AR coating, consisting of multilayers, is designable such that the characteristic matrix is equivalent to that of the ideal quarter wavelength single layer AR coating. Applying this idea to laser diodes with a lasing wavelength of 1.3 µm and equivalent refractive index of 3.2, a very low reflectivity of 0.08 % has been realised by the stratified three layers which consist of alumina (Al2O3, 902 Å)/amorphous silicon (a-Si, 83 Å)/ Al2O3 (902 Å), deposited by electron beam evaporation.
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Shigihara et al. (1995) studied this question.
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