Field dependence of field-effect mobility in hydrogenated amorphous-silicon has been investigated using a novel 4-terminal transistor structure. The mobility evaluated from the transistor characteristics did not depend on electric field strength up to 20 kV/cm.
No takes yet. Share an insight, caveat, or question.
Uchida et al. (1984) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: