Theory of electron resonant tunneling of Si-based double-barrier structures

We present theoretical studies of resonant-tunneling characteristics of Si-based double-barrier structures within a tight-binding model. The model consists of four antibonding (sp3) orbitals per lattice site and is capable of describing the low-lying conduction bands accurately throughout the entire Brillouin zone. Current-voltage curves for some selected Si/Ge strained-layer double-barrier structures and lattice-matched Si/GaP double-barrier structures for different crystallographic orientations are calculated. Negative differential resistances are found for these structures.