Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 27, 1991Applied Physics Letters

Raman analysis of Si/Ge strained-layer superlattices under hydrostatic pressure

View Full Paper
Ask AI
Bookmark
Share

Authors

ZSZhifeng SuiShanxi Agricultural UniversityIHIrving P. HermanEden Medical CenterJBJ. BevkTokyo Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sui et al. (1991) studied this question.

synapsesocial.com/papers/6a8679be27bc8e2c31cc6b64https://doi.org/10.1063/1.104894
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Raman study of order and disorder in SiGe ultrathin superlattices1988 · 69 citations
  2. 2Electronic structure of [110] Si-Ge thin-layer superlattices1989 · 23 citations
  3. 3Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices1988 · 162 citations
  4. 4Symmetrically strained Si/Ge superlattices on Si substrates1988 · 146 citations
  5. 5Interpretation of Raman spectra of Ge/Si ultrathin superlattices1990 · 52 citations