The formation of buried SiO2 layer by high-dose oxygen implanted into Si/Ge and Si/Si0.5Ge0.5 heterostructures is studied by infrared transmission and x-ray photoelectron spectroscopy. The results show that the Ge in the implanted region has no influence on the bonding properties of oxygen, and there exists a critical annealing temperature of about 1250 °C for all the implanted oxygen to be bonded as SiO2.
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Tang et al. (1990) studied this question.
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