The authors have synthesized Pb(Fe2∕3W1∕3)O3 thin films on Pt∕Ti∕SiO2∕Si(100) substrates utilizing chemical solution deposition method. The dielectric relaxation was studied as a function of temperature (100–300K) and frequency (100Hz–1MHz). A broad range of dielectric maxima was found, which shifted towards higher temperature with increase in frequency. The relaxation indication coefficient (γ) and broadening parameter (Δ) were estimated from a linear fit of the modified Curie-Weiss law and were found to be 2.00 and 50K, respectively; indicating strong relaxor behavior. A remarkably good fit to Vogel-Fulcher relationship further supports the relaxor nature of the films. The slim hysteresis loop at low temperature is indicative of ferroelectricity due to the growth of nanopolar regions.
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Kumar et al. (2007) studied this question.
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