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The parameters relevant to dry development of silylated polymers have been studied, in particular ion energy and atomic oxygen concentration. Critical dimension loss is demonstrated to depend upon silylation angle, sputtering rate of the silylated polymer, and development time. Anisotropic etch profiles are argued to be due to a compromise between critical dimension loss and isotropic etching of the unsilylated polymer.
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Joubert et al. (1993) studied this question.
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