Plasma-assisted epitaxial growth of InAs

InAs layers were epitaxially grown directly on GaAs, InP, and GaSb at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. The electronic and crystallographic properties of PAE-InAs grown on substrates with different lattice mismatch were comparatively studied with a variable supply ratio As/In, growth temperature, and thickness of grown films. The electronic properties of PAE-InAs films comparable to those by molecular beam epitaxy (MBE) were obtained in a wide range of supply ratio, with less supply ratio, and at lower temperatures than MBE.