Key points are not available for this paper at this time.
The conductivity and Hall coefficient of InSb have been measured over the temperature range 78^ to 750^. At low temperatures an electron mobility of 30 000 cm^2/volt-sec and a mobility ratio of 29 are observed. The effective mass of electrons is 0. 04m and the width of the forbidden energy gap is 0. 23 ev at T=0^K. Optical absorption studies have been made at temperatures between 13^ and 300^. The position of the absorption edge of degenerate n-type samples depends on the impurity content and is in good agreement with Burstein's predictions.
Breckenridge et al. (1954) studied this question.