The heat capacities of a number of semiconducting substances (Si, GaAs, GaP, etc.) have been calculated on the basis of the quasi‐chain dynamics of covalent crystals [9]. It is shown that the characteristic frequencies v 3 and v 1 correspond to the respective dispersion frequencies at the points Γ(0, 0, 0), X (1, 0, 0), and L (0.5, 0.5, 0.5) of the Brillouin zone determined from the inelastic scattering of slow neutrons, and that it is possible to calculate the parameters ϑ 1 and ϑ 3 from the data of multi‐phonon absorption. The heat capacities of GaP, measured in the range 55 to 300°K, are given.
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Tarassov et al. (1968) studied this question.
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