Influence of carrier leakage on bistability in an inhomogeneously pumped semiconductor laser

A new model for the inherent electrical state of the tandem laser is presented. The electrical coupling between the sections is known from experiments to have a large impact on such a laser. In contrast to earlier rate-equation analysis, our new model allows for an investigation of this influence. In this paper we present results from a theoretical study of how the bistability depends on various parameters when this coupling is taken into account.