The possibility of combined application of gas chromatography, high-resolution IR spectroscopy, and transient microwave gas spectroscopy (TMGS) for investigation of the impurity composition of silicon tetrafluoride is studied. Using high-resolution IR Fourier spectroscopy, the lines of a number of impurities are observed in the region from 4500 to 550 cm −1 . The absorption lines of some of the main well-known impurities in silicon tetrafluoride in the 2-mm wavelength range are analyzed. The advantages of the TMGS method for investigating the multicomponent SiF 4 -impurities system are demonstrated. Using the TMGS method, the freons CHF 3 , CH 2 F 2 , and CH 3 F are experimentally detected in silicon tetrafluoride.
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Вакс et al. (2006) studied this question.
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