Surface charges in a zinc‐borosilicate glass/silicon system were studied by measuring capacitance‐voltage curves of metal‐glass‐silicon capacitors at various temperatures. The capacitance‐voltage curves change remarkably with measurement frequency and temperature. The density of positive fixed charge decreases significantly with increasing glass firing temperature and also when nitrogen gas is added to the oxygen firing atmosphere. On the other hand, the density of the surface state is about ( 2 – 6 ) × 10 12 cm − 2 · eV − 1 and insensitive to glass firing conditions. The surface charge is positive for n‐type silicon and negative for p‐type silicon when the Fermi level is near the intrinsic energy level. The surface charges are reversed, however, when the Fermi level is near the bandedge.
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Misawa et al. (1981) studied this question.