Single crystals of Sb1.5Bi0.5Te3 doped with Ag atoms (c Ag = 0-3.5 × 1019 atoms/cm3) were characterized by X-ray diffraction, measurement of reflectance in the plasma resonance frequency region, Hall coefficient, electrical conductivity, Seebeck coefficient and the figure of merit. It was found that Ag atoms in the crystal structure of Sb1.5Bi0.5Te3 behave like acceptors; up to the concentration of c Ag ≅ 1.7 × 1019 atoms/cm3 they increase the hole concentration, whereas in the concentration region of c Ag ≅ (1.7–3.5) × 1019 atoms/cm3 the hole concentration does not change. The incorporation of Ag atoms into the Sb1.5Bi0.5Te3 crystal structure results in a decrease in the elementary cell volume and a decrease in the value of figure of merit. The increase in the hole concentration is ascribed to the formation of substitutional defects of Ag”Sb, or Ag'Sb. Besides these defects the formation of interstitial ions of Agi and four-layer-lamellae of the type [Ag0.5Sb0.5]-Te-[Ag0.5Sb0.5]-Te is suggested.
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Klichová et al. (1998) studied this question.
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