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A discussion is presented of the mechanism for the electric field induced first order infrared absorption band in diamond-type crystals. The strength of the induced band is determined by the dependence of the electronic polarization on the relative atomic displacements in the unit cell. A measurement of the absorption constant of the induced band should therefore provide quantitative information about the first order Raman scattering matrix elements. The phenomenon of field induced infrared absorption bands should also exist for Raman active modes in other centrosymmetric crystal structures, and for Raman active impurity modes.
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Burstein et al. (1965) studied this question.
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