Low temperature deposition and effect of plasma power on tin oxide thin films prepared by modified plasma enhanced chemical vapor deposition

This work presents low temperature (200 and 300°C) thin film deposition of tin oxide (SnO2) using modified plasma enhanced chemical vapor deposition as a function of radio frequency power (100–500W). Stannic chloride (SnCl4) was used as precursor and oxygen (O2, 300SCCM) as reactant gas. Fine granular morphology was observed with tetragonal rutile structure grown along the [110] direction, at all the deposition conditions. Higher plasma power resulted in smoother morphology, improved crystallinity, and enhanced conductivity. Electrical resistivity value of as low as ∼0.01Ωcm was obtained at the deposition temperature of 300°C and 250W of plasma power.