Thin‐film‐growth characteristics by computer simulation: Nanostructural changes as a function of deposition conditions

A 1 + 1 dimensional computer simulation model for thin‐film deposition based on the ballistic aggregation of hard disks is developed, using the classical Monte Carlo method. The growth of thin metallic (e.g., Ni) and alloy (e.g., Co–Cr) films under different deposition conditions, considering the variation of different parameters, namely, substrate temperature, angle of incidence, substrate surface roughness (including amorphous substrates), and deposition rate, on a (111) face of fcc or a (100) face of hcp substrates is simulated. Results are qualitatively in good agreement with the structure zone model (SZM) predictions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)