We report the enhancement of direct bandgap emission from germanium ring resonators based on silicon-on-insulator (SOI). As a consequence of their strong confinement, a record quality factor (Q) of 620 is obtained that is an order of magnitude higher than that previously characterized for crystalline germanium microcavities. We also describe a pump power dependency of Q due to bandedge shifts not previously reported for silicon-or germanium-based emitters. A decline in the relative peak to baseline intensities with lower Qs is attributed to the Purcell effect on account of the wavelength-scale dimensions and high index contrast of our samples.
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Lim et al. (2008) studied this question.
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