Self-Switching in Single-Heterojunction Injection Lasers

An investigation was made of self-switching in injection lasers with a single Al x Ga 1–x As–GaAs heterojunction operating near critical temperature. A characteristic feature of the self-switching operation was the penetration of the radiation field into the n-type region of the laser diode and the deviation of the angular distribution of the output radiation from the normal to the resonator mirror. The experimental results were in agreement with the expected self-switching in laser diodes with weak waveguide properties.