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High-quality InAsxSb1−x (0<x⩽0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2×104cm2V−1s−1 and cutoff wavelengths longer than 10μm at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8μm are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13μm with a maximum responsivity of 0.26V∕W is obtained at RT. Hence, the InAsxSb1−x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors.
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Peng et al. (2006) studied this question.
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