Molecular-beam epitaxy has been used for the first time to fabricate np junctions in InSb grown onto p-type InSb (100) substrates. Diodes formed by the epitaxial growth of a silicon-doped layer on undoped homoepitaxial material exhibited a bulk generation-recombination-limited R0A value of 105 Ωcm2 and D*λpk of 3 × 1012 cm Hz1/2 W−1 at liquid nitrogen temperature.
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Ashley et al. (1988) studied this question.