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July 1, 1998IEEE Electron Device Letters

Low-frequency noise in AlGaN/GaN heterostructure field effect transistors

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DKD.V. KuksenkovCorning (United States)HTH. TemkinTexas Tech UniversityRGR. GaškaSensor Electronic Technology (United States)

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Kuksenkov et al. (1998) studied this question.

synapsesocial.com/papers/6a86ca72d75f6552a082aaa8https://doi.org/10.1109/55.701423
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