Solution‐Grown Hypervalent CsI₃ Crystal for High‐Sensitive X‐Ray Detection

This is the authors' abstract. We don't add key points for this paper.

A novel hypervalent CsI3 single crystal is grown from solution, as reported in article number 1900290 by Bin-Bin Zhang and co-workers. This is a semiconductor with a large average atomic numbers (Z = 53.5), large density (4.47 g cm‒3), proper band gap of 1.79 eV, and high resistivity of 3.2 × 109 Ω cm. This material can be applied for high performace direct X-ray photon conversion at room temperature.