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Modulation of light output power by field-induced gain switching in a photo-excited AlGaAs graded-index-separate-confinement heterostructure quantum well laser is, for the first time, demonstrated at low temperature (∼40 K). The modulation is caused by changes in spatial separation, e.g. , overlapping of electrons and holes in the GaAs well and graded barrier layers with electric field perpendicular to the hetero-junction plane. An optical pulse as narrow as 140psec full width at half-maximum is generated.
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Takeoka et al. (1987) studied this question.
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