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The theoretical behavior of both the photomagnetoelectric (PME) effect short-circuit current IPME and the photoconductance ΔG is studied as a function of the light intensity, for any injection level. This is carried out by assuming that in a semiconductor band gap, there are two energy levels which control the recombination kinetics. Also, the dependence of both IPME and ΔG on the light intensity is studied as a function of the illuminated surface recombination velocity.
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Augelli et al. (1982) studied this question.
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