In this work we report on steady-state and time-resolved photoluminescence (PL) measurements in nitrogen-doped p-type indium selenide in the 33--210-K temperature range. In samples with low nitrogen concentration the photoluminescence spectrum consists of exciton-related peaks and a band-to-acceptor recombination peak (2.1-{μ}s lifetime) with LO-phonon replica. An ionization energy of 65.5 meV is proposed for the nitrogen-related acceptor. A long-lived (18 {μ}s) component, which consists of an asymmetric broadband centered around the acceptor peak, has been also detected by means of time-resolved PL. Samples with a higher nitrogen concentration show a PL spectrum that mainly consists of the asymmetric long-lived broadband that can be associated to a complex center. The asymmetric shape of this band is quantitatively accounted for in the framework of the configuration coordinate model for complex centers. Under the assumption that the nitrogen-related acceptor is shallow, the Gerlach-Pollman theory allows an estimate of the hole's effective masses, yielding m_h⊥*=(0.73±{}0.09)m₀ and m_h*=(0.17±{}0.03)m₀.
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Ferrer‐Roca et al. (1997) studied this question.
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