X‐ray photoemission studies of silicon and germanium

X‐ray‐induced electron‐emission measurements were used to study the electronic structure of silicon and germanium in a range extending from the top of the valence band to about 1250 eV below the Fermi level. Measured core level values agree very well with previously reported values except for the splitting of the germanium 3p level and the location of the silicon 2s level. “Plasma replicas” were observed for several of the core levels and their valence band photoemission spectra are compared with theoretical density‐of‐states distributions. Two maxima in the germanium conduction‐band density of states are located by comparing the photoemission data with UV absorption data.