A strong infrared emission band spectrum of Si2 was observed in the region between 4500 and 6500 cm−1. It consists of 21 red-degraded bands, which are transitions between two newly observed low-lying singlet states d1Σg+–b1Πμ. The bands arise from transitions between vibrational levels from 0 to 6 in both electronic states. Rotational lines up to J = 162 were observed. A global fit was made to 2000 spectral lines, and fits were made to individual branches of each band. The source was a King-type furnace charged with SiC, filled with helium at a pressure of 100 Torr, and maintained at a temperature of 2700 K. The spectrometer was the Fourier-transform instrument at the National Solar Observatory (Kitt Peak).
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Davis et al. (1987) studied this question.
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