Defect studies in CuBIIIC chalcopyrite compounds using the ion channeling technique

Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuB III C chalcopyrite compounds. The results obtained for CuInSe 2 are compared with experimental channeling spectra. Point defect concentrations up to about 10 21 cm −3 are estimated for CuInSe 2 single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe 2 single crystals.