We report on a large (∼200%), room-temperature, small field (20 mT) magnetoresistance effect in germanium and silicon-diode combined device. This enhanced magnetoresistance is attributed to geometry of germanium and nonlinear electro-transport characteristic of silicon-diode. A two-dimensional finite element model is built to simulate the experimental results. Our work may pave a way to develop low field magnetoresistance devices from germanium and silicon.
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Chen et al. (2014) studied this question.
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