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November 4, 2024Applied Physics Letters

Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

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GZGa ZhangSZShenglei ZhaoXSXiufeng Song

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Zhang et al. (2024) studied this question.

synapsesocial.com/papers/6a86edb1f87adc0a02ca1b0chttps://doi.org/10.1063/5.0237694
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