We calculate the Coulomb interaction induced density, temperature and magnetization-dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor Ga_1-xMnₓAs in the optimally doped metallic regime as a function of carrier density and temperature. We find a large (~0.10.3em0exeV) band-gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band-gap renormalization could be used as an experimental probe to determine the valence band or the impurity band nature of carrier ferromagnetism.
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Zhang et al. (2005) studied this question.
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