The modification effects of both BiVO 4 and Al 2 O 3 on a FTO on efficient oxidative H 2 O 2 production and accumulation from H 2 O were investigated. The initial faradaic efficiency for H 2 O 2 production (FE (H 2 O 2 )) reached 95% due to the suppressing influence of direct O 2 production via H 2 O oxidation on BiVO 4 /FTO. Al 2 O 3 modification suppressed oxidative H 2 O 2 decomposition to O 2 , which was confirmed by changes in the I-V curves after H 2 O 2 addition. The initial FE (H 2 O 2 ) of Al 2 O 3 /BiVO 4 /FTO modified by chemical vapor deposition (CVD) reached 97%. Oxidative H 2 O 2 decomposition was significantly suppressed by the loaded Al 2 O 3 , and the amount of accumulated H 2 O 2 on this composite electrode was reached 7.5 mM at 200 C, which is the highest value in the system for oxidative H 2 O 2 production from H 2 O.
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Miyase et al. (2019) studied this question.
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