Steady‐state diffusion of point defects in the interaction force field

The diffusion equation including the drift term due to the long‐range interaction between a point defect and a spherical sink is solved numerically for the steady‐state concentration of point defects. The effective capture radius of a sink is calculated from the flux integral of point defects, and the biased flux of interstitials over vacancies to an infinitesimal dislocation loop is obtained from the effective capture radii. Effects of temperature, point defect parameters, and elastic properties of the medium on the kinetics of vacancy‐inter‐stitial recombination and of dislocation loop growth are discussed.