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A high-power GaInAsP/InP semiconductor laser optically pumped by a 0.98 µm high-power broad area laser has been proposed. A vertical resonant pumping scheme is introduced to increase the absorption efficiency of the pump light. It is shown that the fraction of absorbed pump light can be increased up to 99% by inserting a highly reflective mirror with a reflectivity of 99%. In addition, a vertical resonant cavity using a GaAs/AlAs distributed Bragg reflector (DBR) was formed by a low-temperature wafer bonding technique.
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Onishi et al. (2001) studied this question.
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