We have demonstrated an AlAs oxidation process for current and light confinement in the AlGaInAs/InP system for the first time. A lattice-mismatched 200-Å-thick AlAs layer grown on an InP substrate by metalorganic chemical vapor deposition (MOCVD) was selectively oxidized. The temperature dependence of the oxidation rate was examined. The oxidized AlAs showed good electric isolation characteristics for lateral current confinement. The proposed AlAs-oxide confinement structure formed on an InP substrate may facilitate fabrication and threshold reduction of long wavelength lasers including vertical-cavity surface-emitting lasers.
No takes yet. Share an insight, caveat, or question.
Ohnoki et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: