Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using direct wafer bonding. InGaAs-InGaAsP multiquantum-well active layers with 40.5-pair InGaAsP-InP stacked mirrors have been directly bonded on 3.5-pair Al2O3/a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-μm has been achieved.
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Wada et al. (1996) studied this question.
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