Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopant

The slow growth rate of molecular beam epitaxy (MBE) allows close to monolayer control of the film thickness. However, if the growth rate can be increased without significant loss of material quality or control, MBE may also become an economical way to grow epitaxial layers for optoelectronic and microwave devices. In this work, Si was studied as an n-type dopant at various growth rates. Hall mobilities of 60 036 cm2/V sec at 77 K and 8839 cm2/V sec at room temperature were achieved using a 1-μm/h growth rate. Higher mobilities were obtained at higher growth rates. Photoluminescence spectra of Si-doped films were dominated by near-band-edge emission. The growth rate of MBE GaAs can be increased at least up to 5 μ/h without change in electrical and optical characteristics of films.