Photoluminescence of Zn-diffused and annealed InP

Ampoule diffusion of Zn in InP gives rise to donor-acceptor photoluminescence transitions with peak positions dependent on the rate of cooling after diffusion. Subsequent annealing in an atmosphere without Zn causes a change in peak position. Luminescence peaks between 1.30 and 1.38 eV are found. These peaks are described as being due to transitions between various Zn interstitial donor levels and the Zn substitutional acceptor level. The luminescence results are correlated with results of secondary ion mass spectrometry and Schottky barrier capacitance-voltage measurements, and are consistent with an earlier model in which Zn diffuses as an interstitial donor and is incorporated both as an interstitial donor and as a substitutional acceptor.