Undoped crystal films with very homogeneous composition were grown on substrates by liquid phase epitaxy. Study was made on physical, electrical, and optical properties of this mixed crystal. The growth temperature was varied between 550° and 750°C. All the crystals were n‐type. The electron mobility was found to vary from 5240 to 8500 cm 2 V −1 sec −1 and the electron concentration from at 300° K. Etch pit density and half‐width of photoluminescence spectra decreased with increasing growth temperature. High quality crystals were grown at around 700°C.
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Takeda et al. (1978) studied this question.
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