Low-loss waveguiding at 1.55 μm wavelenght in quarternary InGaAlAs grown on InP by molecular-beam epitaxy is demonstrated for the first time. Ridge waveguides with length up to 1.8 cm width between 1.3 and 50 μm have losses as low as 2.2dB/cm, showing the potential of this materials systems for high-performance waveguide devices.
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Cinguino et al. (1987) studied this question.
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