High performance double /spl delta/-doped GaAs/In/sub 0.25/Ga/sub 0.75/ As/GaAs pseudomorphic HFETs grown by low pressure MOCVD are reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 /spl mu/m gate length, are achieved.>
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Hsu et al. (1994) studied this question.
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