MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine

We have used tertiarybutylarsine (tBAs) as a source alternative to AsH 3 in the metalorganic vapor phase epitaxy (MOVPE) of selectively doped AlGaAs/GaAs heterostructures. A sheet carrier concentration of 9.2×10 11 cm -2 and an electron mobility of 52000 cm 2 ·V -1 ·s -1 have been obtained at 77 K for a heterostructure with a 5 nm spacer layer. This is, to our knowledge, the first demonstrated fabrication of two-dimensional electron gas with an alternative As source.