Compositionally step-graded quaternary In x (Al z Ga 1-z ) 1-x As buffer layers were used to relieve the mismatch strain between heteroepitaxially grown In x Ga 1-x As (x up to 0.4) layers and their GaAs substrates. The dislocations are confined to the buffer and the misfit strain relative to the substrate is relaxed by approximately 90%. In modulation-doped heterostructures of In y Al 1-y As/In x Ga 1-x As grown on such quaternary buffers, the mobility of the two-dimensional electron gas is comparable to that grown on stepwise compositionally graded ternary In x Ga 1-x As buffer layers.
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Chen et al. (1993) studied this question.
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