End-on images of isolated dislocations, normal dipoles, and Z-shaped faulted dipoles in deformed silicon crystals are obtained by high resolution electron microscopy using the axial illumination technique with many beams. The stacking fault energy is evaluated from the configuration of partial dislocations in such images. Effect of the doping of some impurities is also investigated. The stacking fault energy is determined to be 47.0 mJ/m2 in pure crystals and found to decrease with the increase of the concentration of doped phosphorus atoms.
No takes yet. Share an insight, caveat, or question.
Satō et al. (1981) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: